PHT8N06LT NXP Semiconductors, PHT8N06LT Datasheet - Page 6

• Manufacturer Part Number: PHT8N06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
January 1998
TrenchMOS
Logic level FET
Fig.13. Typical turn-on gate-charge characteristics.
VDS/V
IF/A
V
I
F
40
30
20
10
GS
6
5
4
3
2
1
0
0
= f(V
0
0
= f(Q
Fig.14. Typical reverse diode current.
SDS
G
); conditions: V
); conditions: I
2
Tj/V =
0.5
transistor
4
150
VDS = 14V
D
GS
1
6
= 7 A; parameter V
QG/nC
= 0 V; parameter T
VSDS/V
25
8
1.5
VDS = 44V
10
DS
j
12
2
6
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
W
20
WDSS%
W
DSS
DSS
% = f(T
RGS
40
0.5 LI
60
sp
); conditions: I
D
2
BV
80
Tmb / C
DSS
L
VDS
100
BV
T.U.T.
Product specification
DSS
D
PHT8N06LT
= 2.5 A
120
shunt
R 01
V
DD
-
+
140
Rev 1.100
-ID/100
VDD