PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 2

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMDT290UCE
Product data sheet
Pin
1
2
3
4
5
6
Type number
PMDT290UCE
Type number
PMDT290UCE
Symbol
TR1 (N-channel)
V
V
I
I
P
TR1 (N-channel), Source-drain diode
I
TR1 N-channel), ESD maximum rating
V
D
DM
S
DS
GS
tot
ESD
Symbol Description
S1
G1
D2
S2
G2
D1
Pinning information
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
source current
electrostatic discharge voltage
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
Package
Name
-
Description
plastic surface-mounted package; 6 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
HBM
Rev. 1 — 6 October 2011
j
amb
amb
sp
amb
GS
GS
Simplified outline
= 25 °C
= 25 °C
= 4.5 V; T
= 4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Marking code
AF
SOT666
1
6
amb
amb
2
5
= 25 °C
= 100 °C
3
4
p
≤ 10 µs
Graphic symbol
G1
PMDT290UCE
[1]
[1]
[2]
[1]
[1]
[3]
D1
S1
Min
-
-8
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
D2
S2
SOT666
Version
Max
20
8
800
500
3.2
330
390
1090
370
2000
017aaa262
Unit
V
V
mA
mA
A
mW
mW
mW
mA
V
2 of 20
G2