PMK35EP NXP Semiconductors, PMK35EP Datasheet - Page 2

• Manufacturer Part Number: PMK35EP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMK35EP
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PMK35EP
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Symbol Description
S
S
S
G
D
D
D
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
source
source
source
gate
drain
drain
drain
drain
Package
Name
SO8
Description
plastic small outline package; 8 leads; body width 3.9 mm
Conditions
25 °C ≤ T
25 °C ≤ T
T
see
T
T
see
T
T
T
All information provided in this document is subject to legal disclaimers.
sp
sp
sp
sp
sp
sp
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 25 °C; t
Figure 3
Figure 3
Rev. 02 — 29 April 2010
j
j
Simplified outline
≤ 150 °C
≤ 150 °C; R
p
p
GS
≤ 10 µs; pulsed;
≤ 10 µs; pulsed
GS
Figure 2
SOT96-1 (SO8)
= -10 V; see
= -10 V; see
8
1
GS
= 20 kΩ
P-channel TrenchMOS extremely low level FET
Figure
5
4
Figure 1
1;
Graphic symbol
Min
-
-
-25
-
-
-
-
-55
-55
-
-
G
Typ
-
-
-
-
-
-
-
-
-
-
-
PMK35EP
001aaa025
© NXP B.V. 2010. All rights reserved.
D
S
150
Version
SOT96-1
Max
-30
-30
25
-14.9
-7
-28.8
6.9
150
-5.8
-23
Unit
V
V
V
A
A
A
W
°C
°C
A
A
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