PMK50XP NXP Semiconductors, PMK50XP Datasheet - Page 8
![Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415041/sot096-1_3d_sml.gif)
PMK50XP
Manufacturer Part Number
PMK50XP
Description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMK50XP.pdf
(13 pages)
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Price
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NXP Semiconductors
PMK50XP
Product data sheet
Fig 13. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
GS
= 0 V; f = 1 MHz
1
10
-V
C
All information provided in this document is subject to legal disclaimers.
C
C
DS
rss
iss
oss
03aq08
(V)
10
Rev. 02 — 28 April 2010
2
Fig 14. Source current as a function of source-drain
P-channel TrenchMOS extremely low level FET
(A)
-I
S
20
15
10
5
0
voltage; typical values
V
0
GS
= 0 V
0.5
150 °C
1
T
PMK50XP
j
= 25 °C
-V
© NXP B.V. 2010. All rights reserved.
SD
003aab278
(V)
1.5
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