PMN20EN NXP Semiconductors, PMN20EN Datasheet - Page 2

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMN20EN

Manufacturer Part Number
PMN20EN
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
PMN20EN
Product data sheet
Type number
PMN20EN
Type number
PMN20EN
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
j
amb
stg
DS
GS
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Marking codes
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
Package
Name
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
j
amb
amb
sp
amb
GS
GS
Rev. 1 — 30 May 2011
= 25 °C
= 25 °C
= 10 V; T
= 10 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Marking code
SK
amb
amb
= 25 °C
= 100 °C
p
30 V, 6.7 A N-channel Trench MOSFET
≤ 10 µs
[1]
[1]
[2]
[1]
[1]
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
-
PMN20EN
© NXP B.V. 2011. All rights reserved.
2
Version
SOT457
Max
30
20
6.7
4.5
27
545
1390
4170
150
150
150
1.2
.
°C
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
A
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