PMN20EN NXP Semiconductors, PMN20EN Datasheet - Page 8

• Manufacturer Part Number: PMN20EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN20EN
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= 3 A; V
= 0 V
j
j
= 150 °C
= 25 °C
2
DS
= 10 V; T
4
amb
= 25 °C
(A)
I
S
2.0
1.5
1.0
0.5
0.0
6
0.0
All information provided in this document is subject to legal disclaimers.
Q
017aaa251
G
(nC)
8
0.2
Rev. 1 — 30 May 2011
0.4
Fig 15. Gate charge waveform definitions
(1)
0.6
V
V
V
V
V
GS(pl)
017aaa252
DS
GS(th)
GS
SD
(2)
(V)
30 V, 6.7 A N-channel Trench MOSFET
0.8
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
PMN20EN
© NXP B.V. 2011. All rights reserved.
017aaa137
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