BLF369 NXP Semiconductors, BLF369 Datasheet - Page 6

• Manufacturer Part Number: BLF369
• Description: General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF369_4
Product data sheet
Fig 4.
Fig 6.
(dB)
(dB)
G
G
P
p
22
20
18
16
20
19
18
17
16
15
0
0
V
I
2-Tone power gain and drain efficiency as a
function of peak envelope power; typical
values
f = 225 MHz; V
Pulsed power gain as function of load power;
typical values
Dq
DS
= 10 %.
= 2
= 32 V; f
7.2 2-Tone
7.3 Pulsed
1.0 A; T
200
1
200
= 225 MHz; f
DS
h
= 32 V; I
= 25 C.
400
Dq
G
2
D
P
= 225.1 MHz;
400
= 2
600
P
L(PEP)
1 A; t
P
001aae502
001aah498
L
(W)
p
(W)
= 2 ms;
Rev. 04 — 19 February 2009
600
800
60
40
20
0
(%)
D
Fig 5.
Fig 7.
IMD3
(dBc)
(%)
D
20
40
60
70
50
30
10
0
0
V
I
2-Tone third order intermodulation distortion
as a function of peak envelope power; typical
values
0
f = 225 MHz; V
Pulsed drain efficiency as function of
load power; typical values
Dq
DS
= 10 %.
= 2
= 32 V; f
Multi-use VHF power LDMOS transistor
1.0 A; T
200
1
200
= 225 MHz; f
DS
h
= 32 V; I
= 25 C.
400
Dq
2
= 225.1 MHz;
400
= 2
600
P
L(PEP)
1 A; t
© NXP B.V. 2009. All rights reserved.
P
001aae503
001aah499
BLF369
L
(W)
(W)
p
= 2 ms;
600
800
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