TS861IDT STMicroelectronics, TS861IDT Datasheet - Page 9
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TS861IDT
Manufacturer Part Number
TS861IDT
Description
IC COMP BICMOS R-R MCRPWR 8SOIC
Manufacturer
STMicroelectronics
Type
General Purposer
Datasheet
1.TS861AIDT.pdf
(19 pages)
Specifications of TS861IDT
Number Of Elements
1
Output Type
Push-Pull
Voltage - Supply
2.7 V ~ 10 V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Number Of Channels
1 Channel
Response Time
500 ns
Offset Voltage (max)
18 mV
Input Bias Current (max)
600 pA
Supply Voltage (max)
10 V
Supply Voltage (min)
2.7 V
Supply Current (max)
12 uA
Maximum Power Dissipation
710 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4072-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TS861IDT
Manufacturer:
FAIRCHILD
Quantity:
203
TS861, TS862, TS864
Figure 13. V
Figure 15. Propagation delay T
Figure 17. Propagation delay T
5
4
3
2
1
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
7
6
5
4
3
2
1
0
0
0
V
with V
with V
0
OL
CC
10
versus I
= 5 V
V
2
Common mode voltage V
V
V
CC
CC
CC
V
OVD
2
Common mode voltage V
OVD
= 5V
CC
= 10V
= 2.7V
= 2.7V
T=25
Current sink I
20
4
= 100 mV
= 10 mV
T=85
o
C
4
SINK
o
C
V
SINK
CC
6
30
= 5V
(mA)
6
and temperature at
ICM
(V)
ICM
PLH
PLH
T=+25°C
V
C
V
8
(V)
OVD
LOAD
CC
T=+25°C
V
C
T=-40
8
= 10V
40
OVD
LOAD
=10mV
=50pF
versus V
=100mV
versus V
V
=50pF
o
C
CC
10
= 5V
10
Doc ID 6422 Rev 2
50
ICM
ICM
Figure 14. V
Figure 16. Propagation delay T
Figure 18. Propagation delay T
5
4
3
2
1
0
1.4
1.2
1.0
0.8
0.6
0.4
3.0
2.5
2.0
1.5
1.0
0.5
0
V
temperature at V
with V
with V
V
T=+25°C
V
C
CC
0
0
CC
OVD
LOAD
OH
= 5V
= 2.7V
10
=100mV
=50pF
versus I
T=+85
2
Common mode voltage V
2
Common mode voltage V
V
OVD
OVD
CC
Current source I
o
= 5V
C
20
V
T=+25
= 100 mV
= 10 mV
CC
V
4
4
Electrical characteristics
CC
= 2.7V
SOURCE
= 5V
o
C
V
SOURCE
CC
30
6
= 10V
6
CC
(mA)
V
CC
ICM
ICM
= 10V
= 5 V
PHL
PHL
(V)
and
T=-40
(V)
8
T=+25°C
V
C
8
OVD
LOAD
40
o
C
=10mV
=50pF
versus V
versus V
10
10
50
ICM
ICM
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