TS861IDT STMicroelectronics, TS861IDT Datasheet - Page 9

• Manufacturer Part Number: TS861IDT
• Description: IC COMP BICMOS R-R MCRPWR 8SOIC
• Manufacturer: STMicroelectronics
• Type: General Purposer

Specifications of TS861IDT

• Number Of Elements: 1
• Output Type: Push-Pull
• Voltage - Supply: 2.7 V ~ 10 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Number Of Channels: 1 Channel
• Response Time: 500 ns
• Offset Voltage (max): 18 mV
• Input Bias Current (max): 600 pA
• Supply Voltage (max): 10 V
• Supply Voltage (min): 2.7 V
• Supply Current (max): 12 uA
• Maximum Power Dissipation: 710 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4072-2

TS861, TS862, TS864
Figure 13. V
Figure 15. Propagation delay T
Figure 17. Propagation delay T
5
4
3
2
1
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
7
6
5
4
3
2
1
0
0
0
V
with V
with V
0
OL
CC
10
versus I
= 5 V
V
2
Common mode voltage V
V
V
CC
CC
CC
V
OVD
2
Common mode voltage V
OVD
= 5V
CC
= 10V
= 2.7V
= 2.7V
T=25
Current sink I
20
4
= 100 mV
= 10 mV
T=85
o
C
4
SINK
o
C
V
SINK
CC
6
30
= 5V
(mA)
6
and temperature at
ICM
(V)
ICM
PLH
PLH
T=+25°C
V
C
V
8
(V)
OVD
LOAD
CC
T=+25°C
V
C
T=-40
8
= 10V
40
OVD
LOAD
=10mV
=50pF
versus V
=100mV
versus V
V
=50pF
o
C
CC
10
= 5V
10
Doc ID 6422 Rev 2
50
ICM
ICM
Figure 14. V
Figure 16. Propagation delay T
Figure 18. Propagation delay T
5
4
3
2
1
0
1.4
1.2
1.0
0.8
0.6
0.4
3.0
2.5
2.0
1.5
1.0
0.5
0
V
temperature at V
with V
with V
V
T=+25°C
V
C
CC
0
0
CC
OVD
LOAD
OH
= 5V
= 2.7V
10
=100mV
=50pF
versus I
T=+85
2
Common mode voltage V
2
Common mode voltage V
V
OVD
OVD
CC
Current source I
o
= 5V
C
20
V
T=+25
= 100 mV
= 10 mV
CC
V
4
4
Electrical characteristics
CC
= 2.7V
SOURCE
= 5V
o
C
V
SOURCE
CC
30
6
= 10V
6
CC
(mA)
V
CC
ICM
ICM
= 10V
= 5 V
PHL
PHL
(V)
and
T=-40
(V)
8
T=+25°C
V
C
8
OVD
LOAD
40
o
C
=10mV
=50pF
versus V
versus V
10
10
50
ICM
ICM
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