BF998 NXP Semiconductors, BF998 Datasheet - Page 3

Depletion type Field-Effect Transistor in a plastic SOT143 package

BF998

Manufacturer Part Number
BF998
Description
Depletion type Field-Effect Transistor in a plastic SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm.
2. Device mounted on a printed-circuit board.
1996 Aug 01
V
I
I
I
P
P
T
T
D
SYMBOL
stg
j
DS
tot
tot
Silicon N-channel dual-gate MOS-FETs
G1
G2
handbook, halfpage
(1) Ceramic substrate.
(2) Printed-circuit board.
P tot max
(mW)
200
100
Fig.3 Power derating curves; BF998.
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation; BF998
total power dissipation; BF998R up to T
storage temperature
operating junction temperature
(2)
PARAMETER
(1)
100
T amb ( C)
o
MLA198
up to T
up to T
200
amb
amb
amb
3
= 60 C; see Fig.3; note 1 
= 50 C; see Fig.3; note 2 
= 50 C; see Fig.4; note 1 
CONDITIONS
handbook, halfpage
P tot max
(mW)
200
100
Fig.4 Power derating curve; BF998R.
0
0
65
MIN.
100
BF998; BF998R
Product specification
12
30
10
10
200
200
200
+150
150
T amb (°C)
MAX.
MGA002
V
mA
mA
mA
mW
mW
mW
C
C
200
UNIT