STM32F105V8 STMicroelectronics, STM32F105V8 Datasheet - Page 54

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STM32F105V8

Manufacturer Part Number
STM32F105V8
Description
Mainstream Connectivity line, ARM Cortex-M3 MCU with 64 Kbytes Flash, 72 MHz CPU, CAN, USB 2.0 OTG
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F105V8

Core
ARM 32-bit Cortex™-M3 CPU
Conversion Range
0 to 3.6 V
Dma
12-channel DMA controller
Supported Peripherals
timers, ADCs, DAC, I2Ss, SPIs, I2Cs and USARTs
Systick Timer
a 24-bit downcounter
10/100 Ethernet Mac With Dedicated Dma And Sram (4 Kbytes)
IEEE1588 hardware support, MII/RMII available on all packages

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0
Electrical characteristics
Table 32.
5.3.11
Table 33.
1. Based on characterization results, not tested in production.
Table 34.
54/104
Symbol
V
V
Symbol
Symbol
S
ESD(HBM)
ESD(CDM)
EMI
LU
Parameter
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE
IEC61967-2 standard which specifies the test board and the pin loading.
EMI characteristics
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
ESD absolute maximum ratings
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Electrical sensitivities
Peak level
Static latch-up class
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
Parameter
Ratings
V
LQFP100 package
compliant with IEC61967-2
DD
= 3.3 V, T
Conditions
A
= 25 °C,
T
A
= +105 °C conforming to JESD78A
Doc ID 15274 Rev 6
T
JESD22-A114
T
JESD22-C101
A
A
= +25 °C conforming to
= +25 °C conforming to
Conditions
130 MHz to 1GHz
frequency band
SAE EMI Level
30 to 130 MHz
0.1 to 30 MHz
Monitored
Conditions
2
II
Class Maximum value
STM32F105xx, STM32F107xx
8/48 MHz
Max vs. [f
26
25
9
4
HSE
2000
8/72 MHz
500
/f
HCLK
13
31
9
4
II level A
]
Class
(1)
dBµV
Unit
Unit
-
V

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