STM32F417IE STMicroelectronics, STM32F417IE Datasheet - Page 71

• Manufacturer Part Number: STM32F417IE
• Description: High-performance and DSP with FPU, ARM Cortex-M4 MCU with 512 Kbytes Flash, 168 MHz CPU, Art Accelerator, Ethernet, HW crypto
• Manufacturer: STMicroelectronics

Specifications of STM32F417IE

• Core: ARM 32-bit Cortex™-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 168 MHz, memory protection unit, 210 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
• 3×12-bit, 2.4 Msps A/d Converters: up to 24 channels and 7.2 MSPS in triple interleaved mode
• General-purpose Dma: 16-stream DMA controller with FIFOs and burst support
• Up To 17 Timers: up to twelve 16-bit and two 32-bit timers up to 168 MHz, each with up to 4 IC/OC/PWM or pulse counter and quadrature (incremental) encoder input
• 10/100 Ethernet Mac With Dedicated Dma: supports IEEE 1588v2 hardware, MII/RMII
• Cryptographic Acceleration: hardware acceleration for AES 128, 192, 256, Triple DES, HASH (MD5, SHA-1), and HMAC
• Rtc: subsecond accuracy, hardware calendar

STM32F415xx, STM32F417xx
5.3.6
Table 16.
1. The product behavior is guaranteed by design down to the minimum V
2. The average expected gain in power consumption when VOS = 0 compared to VOS = 1 is around 10% for
3. Guaranteed by design, not tested in production.
4. The reset temporization is measured from the power-on (POR reset or wakeup from V
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in
measurement
All Run mode current consumption measurements given in this section are performed using
a CoreMark-compliant code.
T
RSTTEMPO
V
the whole temperature range, when the system clock frequency is between 30 and 144 MHz.
when first instruction is read by the user application code.
E
Symbol
BORhyst
I
V
V
V
RUSH
RUSH
V
BOR1
BOR2
BOR3
12
(3)
(3)
(3)
(3)(4)
Embedded reset and power control block characteristics (continued)
scheme.
Brownout level 1
threshold
Brownout level 2
threshold
Brownout level 3
threshold
1.2 V domain
voltage
BOR hysteresis
Reset temporization
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
Parameter
(2)(3)
Doc ID 022063 Rev 2
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
VOS bit in PWR_CR
register = 0
VOS bit in PWR_CR
register = 1
V
I
RUSH
DD
= 1.8 V, T
= 171 mA for 31 µs
Conditions
A
= 105 °C,
Figure 19: Current consumption
POR/PDR
Electrical characteristics
2.13
2.23
2.44
2.53
2.75
2.85
1.08
1.20
Min
0.5
value.
-
-
-
BAT
2.19
2.29
2.50
2.59
2.83
2.92
1.14
1.26
Typ
100
160
1.5
-
) to the instant
Max
2.24
2.33
2.56
2.63
2.88
2.97
1.20
1.32
200
3.0
5.4
-
71/168
Unit
mV
mA
ms
µC
V
V
V
V
V
V
V
V