STM8S103F3 STMicroelectronics, STM8S103F3 Datasheet - Page 68

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STM8S103F3

Manufacturer Part Number
STM8S103F3
Description
Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S103F3

Program Memory
8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
Data Memory
640 bytes true data EEPROM; endurance 300 kcycles
Ram
1 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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Electrical characteristics
10.3.5
68/113
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
Symbol
Symbol
V
(1)
or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.
(2)
V
t
t
N
t
prog
erase
RET
RM
DD
RW
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)
Refer to the Operating conditions section for the value of V
Parameter
Operating voltage
(all modes, execution/
write/erase)
Standard programming time
(including erase) for
byte/word/block (1 byte/
4 bytes/64 bytes)
Fast programming time for
1 block (64 bytes)
Erase time for 1 block
(64 bytes)
Erase/write cycles
(program memory)
Erase/write cycles
(data memory)
Data retention (program
and data memory) after 10k
erase/write cycles at
T
A
= +55 °C
Parameter
Data retention mode
Table 37: Flash program memory/data EEPROM memory
Table 36: RAM and hardware registers
(2)
(2)
DocID15441 Rev 7
(1)
Conditions
f
T
T
T
CPU
A
A
RET
= +85 °C
= +125 °C
≤ 16 MHz
= 55°C
Conditions
Halt mode (or reset)
STM8S103K3 STM8S103F3 STM8S103F2
Min
2.95
100
000
300
000
20
IT-max
(1)
Typ
6
3
3
1 M
Min
V
IT-max
Max
5.5
6.6
3.33
3.33
(2)
Unit
V
Unit
V
ms
cycles
years

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