STM8S103F3 STMicroelectronics, STM8S103F3 Datasheet - Page 88

no-image

STM8S103F3

Manufacturer Part Number
STM8S103F3
Description
Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S103F3

Program Memory
8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
Data Memory
640 bytes true data EEPROM; endurance 300 kcycles
Ram
1 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STM8S103F3
Manufacturer:
ST
0
Part Number:
STM8S103F3M3
Manufacturer:
ST
0
Part Number:
STM8S103F3M6
Manufacturer:
FSC
Quantity:
4 500
Part Number:
STM8S103F3M6
Manufacturer:
ST
0
Part Number:
STM8S103F3M6TR
Manufacturer:
SONY
Quantity:
12 500
Part Number:
STM8S103F3M6TR
Manufacturer:
ST
0
Part Number:
STM8S103F3P
Manufacturer:
ST
0
Part Number:
STM8S103F3P3
Manufacturer:
ON
Quantity:
3 206
Part Number:
STM8S103F3P3TR
Manufacturer:
STMicroelectronics
Quantity:
2 000
Part Number:
STM8S103F3P6
Manufacturer:
ST
Quantity:
3 000
Electrical characteristics
10.3.11.3
88/113
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O ports),
the product is monitored in terms of emission. This emission test is in line with the norm SAE
IEC 61967-2 which specifies the board and the loading of each pin.
Symbol
Symbol
V
V
(1)
in AN2860 (EMC guidelines for STM8S microcontrollers).
FESD
EFTB
S
Data obtained with HSI clock configuration, after applying HW recommendations described
EMI
Parameter
Voltage limits to be
applied on any I/O pin to
induce a functional
disturbance
Fast transient voltage
burst limits to be applied
through 100 pF on V
and V
functional disturbance
Parameter
Peak level
SS
pins to induce a
Conditions
General
conditions
V
T
LQFP32
package
A
DD
= 25 °C
= 5 V
DocID15441 Rev 7
DD
Table 48: EMS data
Conditions
Table 49: EMI data
V
(HSI clock), conforming to IEC 61000-4-2
V
(HSI clock),conforming to IEC 61000-4-4
DD
DD
Monitored
frequency band
= 3.3 V, T
0.1 MHz to
30 MHz
30 MHz to
= 3.3 V, T
STM8S103K3 STM8S103F3 STM8S103F2
A
A
= 25 °C ,f
= 25 °C, f
Max f
16 MHz/
8 MHz
5
4
MASTER
MASTER
HSE
/f
= 16 MHz
= 16 MHz
16 MHz/
16 MHz
CPU
5
5
(1)
Level/
class
2/B
4/A
dBμV
Unit
(1)
(1)

Related parts for STM8S103F3