STM8S207RB STMicroelectronics, STM8S207RB Datasheet - Page 75

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STM8S207RB

Manufacturer Part Number
STM8S207RB
Description
Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S207RB

Max Fcpu
up to 24 MHz, 0 wait states @ fCPU≤ 16 MHz
Program
up to 128 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
Data
up to 2 Kbytes true data EEPROM; endurance 300 kcycles
Ram
up to 6 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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STM8S207xx, STM8S208xx
10.3.7
Subject to general operating conditions for V
Table 41.
1. Data based on characterization results, not tested in production.
2. The R
3.
t
R
V
t
INFP(NRST)
V
t
V
IFP(NRST)
Symbol
OP(NRST)
Data guaranteed by design, not tested in production.
OL(NRST)
PU(NRST)
IH(NRST)
IL(NRST)
PU
pull-up equivalent resistor is based on a resistive transistor
Figure 32. Typ. V
Reset pin characteristics
NRST pin characteristics
Figure 33. Typical NRST V
NRST Input low level voltage
NRST Input high level voltage
NRST Output low level voltage
NRST Pull-up resistor
NRST Input filtered pulse
NRST Input not filtered pulse
NRST output pulse
Parameter
DD -
(1)
(2)
V
OH
(3)
6
5
4
3
2
1
0
1.75
1.25
0.75
0.25
2.5
1.5
0.5
@ V
(1)
2
1
0
(3)
(1)
IL
0
Doc ID 14733 Rev 12
(1)
DD
and V
DD
3
2
and T
-40˚C
25˚C
85˚C
125˚C
= 3.3 V (high sink ports)
I
IH
3.5
OL
Conditions
4
vs V
A
= 2 mA
unless otherwise specified.
4
6
V
DD
DD
I
OL
[V]
[mA]
@ 4 temperatures
4.5
8
0.7 x V
5
10
-0.3 V
Min
500
30
15
5.5
12
DD
-40˚C
25˚C
85˚C
125˚C
14
Typ
6
Electrical characteristics
55
1)
V
0.3 x V
DD
Max
0.5
80
75
+ 0.3
DD
75/103
Unit
ns
ns
µs
V

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