STF20NM60D STMicroelectronics, STF20NM60D Datasheet - Page 4

• Manufacturer Part Number: STF20NM60D
• Description: N-CHANNEL 600V 0.26 Ohm 20A TO-220FP FDmesh™ POWER MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C
C
V
Symbol
CASE
Symbol
R
oss eq.
V
(BR)DSS
g
increases from 0 to 80%
C
I
I
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
fs
Q
oss eq.
oss
rss
iss
gs
gd
G
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance V
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Drain-source breakdown
voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Parameter
Parameter
DS
= 0)
GS
= 0)
STF20NM60D - STP20NM60FD - STW20NM60FD
I
V
V
V
V
V
V
I
V
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
V
V
(see Figure 17)
D
D
GS
GS
DS
DS
DS
DS
DS
GS
DD
GS
= 250µA, V
= 10A
= Max rating, T
= Max rating
= ±30V
= V
= 10V, I
> I
= 25V, f = 1 MHz, V
= 0V, V
= 10V
= 480V, I
Test conditions
Test conditions
D(on)
GS
, I
DS
D
x R
D
D
GS
= 10A
= 250µA
= 0V to 480V
= 20A,
DS(on)max,
= 0
C
= 125 °C
GS
= 0
Min
Min
600
3
1300
0.26 0.29
Typ Max Unit
Typ Max Unit
500
190
2.7
35
37
10
17
oss
4
9
when V
±10
52
10
1
0
5
DS
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
S
Ω
V
V
Ω