DS1270Y Maxim, DS1270Y Datasheet

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DS1270Y

Manufacturer Part Number
DS1270Y
Description
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits
Manufacturer
Maxim
Datasheet

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19-5615; Rev 11/10
FEATURES
 5 years minimum data retention in the
 Data is automatically protected during power
 Unlimited write cycles
 Low-power CMOS operation
 Read and write access times of 70 ns
 Lithium energy source is electrically
 Full ±10% V
 Optional ±5% V
 Optional industrial temperature range of
DESCRIPTION
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as
2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry which constantly monitors V
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
www.maxim-ic.com
absence of external power
loss
disconnected to retain freshness until power is
applied for the first time
(DS1270AB)
-40°C to +85°C, designated IND
CC
operating range (DS1270Y)
CC
operating range
CC
for an out-of-tolerance condition. When such a condition occurs,
1 of 8
PIN ASSIGNMENT
PIN DESCRIPTION
A0 – A20
DQ0 - DQ7
V
GND
NC
CE
WE
OE
CC
36-Pin ENCAPSULATED PACKAGE
GND
DQ1
DQ2
16M Nonvolatile SRAM
DQ0
A20
A18
A16
A14
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
740-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DS1270Y/AB
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
V
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
CC

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DS1270Y Summary of contents

Page 1

... Low-power CMOS operation  Read and write access times  Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time  Full ±10% V operating range (DS1270Y) CC  Optional ±5% V operating range CC (DS1270AB)  Optional industrial temperature range of -40° ...

Page 2

... ODW DATA RETENTION MODE The DS1270AB provides full-functional capability for V 4.5 volts. The DS1270Y provides full-functional capability for V protects by 4.25 volts. Data is maintained in the absence of V The nonvolatile static RAMs constantly monitor V automatically write protect themselves, all inputs become don’t care, and all outputs become high- impedance ...

Page 3

... Write Protection Voltage (DS1270AB) Write Protection Voltage (DS1270Y) CAPACITANCE PARAMETER Input Capacitance Output Capacitance SYMBOL MIN TYP V 4.75 5 4 =5V ± 5% for DS1270AB =5V ± 10% for DS1270Y See Note 10 SYMBOL MIN TYP 1.0 CCS1 I 100 CCS2 ...

Page 4

... WR1 t WR2 15 t ODW t 5 OEW DH1 t DH2 DS1270Y/AB =5V ± 5% for DS1270AB) CC =5V ± 10% for DS1270Y) CC UNITS NOTES MAX ...

Page 5

... TIMING DIAGRAM: WRITE CYCLE 1 TIMING DIAGRAM: WRITE CYCLE 2 SEE NOTES AND DS1270Y/AB ...

Page 6

... WE or going high See Note 10) A TYP MAX UNITS µs 1.5 µs µ 125 TYP MAX UNITS years is measured from the latter of low transition, the output WE high transition, the output WE DS1270Y/AB NOTES 11 = +25°C) NOTES ...

Page 7

... SUPPLY PIN-PACKAGE TOLERANCE 5V ± 740 EDIP 5V ± 740 EDIP 5V ± 10% 36 740 EDIP 5V ± 10% 36 740 EDIP OUTLINE NO. MDT36#2 21-0245 DS1270Y/AB low transition starting from the time power SPEED GRADE (ns Note that a “+”, LAND PATTERN NO. — ...

Page 8

... Absolute Maximum Ratings section; removed the -100 MIN/MAX information from the AC Electrical 11/10 Characteristics table; updated the Ordering Information table (removed -100 parts and leaded -70 parts); replaced the package outline drawing with the Package Information table DESCRIPTION DS1270Y/AB PAGES CHANGED ...

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