DS1270W Maxim, DS1270W Datasheet

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DS1270W

Manufacturer Part Number
DS1270W
Description
The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits
Manufacturer
Maxim
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS1270W-100IND#
Manufacturer:
DALLAS
Quantity:
12
Part Number:
DS1270W-100IND+
Manufacturer:
VISHAY
Quantity:
6 500
19-5614; Rev 11/10
FEATURES
 Five years minimum data retention in the
 Data is automatically protected during power
 Unlimited write cycles
 Low-power CMOS operation
 Read and write access times of 100ns
 Lithium energy source is electrically
 Optional industrial (IND) temperature range
DESCRIPTION
The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as
2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors V
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles that can be executed, and no
additional support circuitry is required for microprocessor interfacing.
www.maxim-ic.com
absence of external power
loss
disconnected to retain freshness until power is
applied for the first time
of -40°C to +85°C
CC
for an out-of-tolerance condition. When such a condition occurs,
1 of 8
3.3V 16Mb Nonvolatile SRAM
PIN ASSIGNMENT
PIN DESCRIPTION
A0–A20
DQ0–DQ7
V
GND
NC
CE
WE
OE
CC
GND
DQ1
DQ2
DQ0
A20
A18
A16
A14
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
36-Pin Encapsulated Package
740mil Extended
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+3.3V)
- Ground
- No Connect
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
DS1270W
V
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
CC

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DS1270W Summary of contents

Page 1

... Optional industrial (IND) temperature range of -40°C to +85°C DESCRIPTION The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors V the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption ...

Page 2

... However, if the output drivers are enabled ( will disable the outputs in t ODW DATA-RETENTION MODE The DS1270W provides full-functional capability for V Data is maintained in the absence of V RAMs constantly monitor V CC protect themselves, all inputs become don’t care, and all outputs become high-impedance below approximately 2 ...

Page 3

... 150 CCS1 I 100 CCS2 I CCO1 V 2.8 2.9 TP SYMBOL MIN TYP I DS1270W -0.3V to +4.6V 0°C to +70°C -40°C to +85°C -40°C to +85°C +260° See Note 10) A MAX UNITS NOTES 3 +0 3.3V ± 0.3V) CC MAX UNITS NOTES µA +4.0 µ ...

Page 4

... COE 100 WR1 t 20 WR2 t ODW t 5 OEW DH1 t 20 DH2 DS1270W = 3.3V ± 0.3V) CC UNITS NOTES MAX ns 100 100 ...

Page 5

... TIMING DIAGRAM: WRITE CYCLE 1 TIMING DIAGRAM: WRITE CYCLE 2 SEE NOTES AND DS1270W ...

Page 6

... See Note 10) A TYP MAX UNITS µs 1.5 µs µ 125 TYP MAX UNITS years is measured from the latter of low transition, the output WE high transition, the output WE low transition, CE DS1270W NOTES 11 = +25°C) NOTES ...

Page 7

... Input Pulse Rise and Fall Times: 5ns SUPPLY TOLERANCE 3.3V ± 0.3V 3.3V ± 0.3V OUTLINE NO. MDT36#2 21-0245 first applied by the CC starting from the time PIN- SPEED GRADE PACKAGE (ns) 36 740 EDIP 100 36 740 EDIP 100 Note that a “+”, LAND PATTERN NO. — DS1270W ...

Page 8

... Absolute Maximum Ratings section; removed the -150 MIN/MAX information from the AC Electrical 11/10 Characteristics table; updated the Ordering Information table (removed -150 parts and leaded -100 parts); replaced the package outline drawing with the Package Information table DESCRIPTION DS1270W PAGES CHANGED ...

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