AP2302GN-HF Advanced Power Electronics Corp., AP2302GN-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness

AP2302GN-HF

Manufacturer Part Number
AP2302GN-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2302GN-HF

Vds
20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
85
Rds(on) / Max(m?) Vgs@2.5v
115
Qg (nc)
4.4
Qgs (nc)
0.6
Qgd (nc)
1.9
Id(a)
3.2
Pd(w)
1.38
Configuration
Single N
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2302GN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
Company:
Part Number:
AP2302GN-HF
Quantity:
773
Company:
Part Number:
AP2302GN-HF
Quantity:
21 000
▼ Capable of 2.5V gate drive
▼ Small package outline
▼ Surface mount package
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-23
, V
, V
GS
GS
D
@ 4.5V
@ 4.5V
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
1.38
0.01
+12
3.2
2.6
20
10
DS(ON)
DSS
AP2302GN-HF
Value
90
D
S
85mΩ
200902046
3.2A
Units
W/℃
℃/W
20V
Unit
W
V
V
A
A
A
1

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AP2302GN-HF Summary of contents

Page 1

... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter 4. 4. Parameter 3 AP2302GN-HF Halogen-Free Product BV 20V DSS R 85mΩ DS(ON Rating Units 20 V +12 V 3 ...

Page 2

... AP2302GN-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 I = =4. 1.4 1.2 1.0 0.8 0.6 -50 5 Fig 4. Normalized On-Resistance 1.4 1 0.6 0.2 1.3 -50 Fig 6. Gate Threshold Voltage v.s. AP2302GN- =150 C A 4.5V 3.5V 3.0V 2.5V V =2.0V G 0.5 1.0 1.5 2.0 2 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP2302GN- =3. =10V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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