AP2305AGN Advanced Power Electronics Corp., AP2305AGN Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness

AP2305AGN

Manufacturer Part Number
AP2305AGN
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2305AGN

Vds
-30V
Vgs
±12V
Rds(on) / Max(m?) Vgs@10v
60
Rds(on) / Max(m?) Vgs@4.5v
80
Rds(on) / Max(m?) Vgs@2.5v
150
Qg (nc)
10
Qgs (nc)
1.8
Qgd (nc)
3.6
Id(a)
-3.2
Pd(w)
1.38
Configuration
Single P
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2305AGN
Manufacturer:
APEC/富鼎
Quantity:
20 000
Company:
Part Number:
AP2305AGN
Quantity:
45 000
Part Number:
AP2305AGN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
Company:
Part Number:
AP2305AGN-HF
Quantity:
1 870
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-amb
Description
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1,2
3
3
SOT-23
D
G
3
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
± 12
1.38
0.01
- 30
-3.2
-2.6
-10
DS(ON)
DSS
Value
90
AP2305AGN
D
S
200630062-1/4
80mΩ
- 3.2A
-30V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A

Related parts for AP2305AGN

AP2305AGN Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter 3 3 1,2 Parameter 3 AP2305AGN Pb Free Plating Product BV -30V DSS R 80mΩ DS(ON 3. Rating Units - 30 ± 12 -3.2 -2 ...

Page 2

... AP2305AGN Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 = -1. -3. 1.6 = -4.5V GS 1.4 1.2 1 0.8 0 -50 Fig 4. Normalized On-Resistance 1 0.5 0 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP2305AGN o C -5.0V -4.0V 65mΩ -3. -2. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP2305AGN -3. -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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