AP2309AGN-HF Advanced Power Electronics Corp., AP2309AGN-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness

AP2309AGN-HF

Manufacturer Part Number
AP2309AGN-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2309AGN-HF

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
75
Rds(on) / Max(m?) Vgs@4.5v
120
Qg (nc)
7
Qgs (nc)
1.2
Qgd (nc)
3.7
Id(a)
-3.4
Pd(w)
1.38
Configuration
Single P
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2309AGN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-amb
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-23
D
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
1.38
- 30
+20
-3.4
-2.7
AP2309AGN-HF
-12
DS(ON)
DSS
Value
90
D
S
201006212
75mΩ
- 3.4A
-30V
Units
℃/W
Unit
W
V
V
A
A
A
1

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AP2309AGN-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-amb Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter Parameter 3 AP2309AGN-HF Halogen-Free Product BV -30V DSS R 75mΩ DS(ON 3. Rating Units - ...

Page 2

... AP2309AGN-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 - -10V GS 1.4 1.2 1 0.8 0.6 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.6 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP2309AGN- -10V -7.0V -6.0V 65mΩ -5. -4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j 2.01E+ 100 o ...

Page 4

... AP2309AGN- - -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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