AP4424AGM Advanced Power Electronics Corp., AP4424AGM Datasheet - Page 4

• Manufacturer Part Number: AP4424AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4424AGM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 8.4
• Qgs (nc): 1.8
• Qgd (nc): 5
• Id(a): 13
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP4424AGM
0.01
100
0.1
10
10
1
8
6
4
2
0
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Single Pulse
T
I
V
90%
10%
V
A
D
DS
=25
GS
= 8 A
V
o
DS
C
Q
V
0.1
4
t
V
G
, Drain-to-Source Voltage (V)
d(on)
DS
DS
V
, Total Gate Charge (nC)
= 15 V
DS
= 18 V
= 24 V
t
r
8
1
t
d(off)
10
12
t
f
100ms
100us
10ms
1ms
DC
1s
100
16
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
800
600
400
200
0.1
0
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
V
Duty factor=0.5
0.01
0.02
0.1
0.05
Single Pulse
0.2
G
0.001
5
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
21
10
=125
j
= P
t
o
C/W
f=1.0MHz
DM
T
x R
100
25
thja
+ T
C
C
C
Q
a
oss
iss
rss
1000
29
4