AP4500GM Advanced Power Electronics Corp., AP4500GM Datasheet - Page 4

• Manufacturer Part Number: AP4500GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4500GM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Rds(on) / Max(m?) Vgs@2.5v: 45
• Qg (nc): 10
• Qgs (nc): 1.1
• Qgd (nc): 4.1
• Id(a): 6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4500GM
20
16
12
36
32
28
24
20
10
8
4
0
8
6
4
2
0
0
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
=25
0.2
℃
V
V
Reverse Diode
0
V
DS
SD
T
GS
2
j
, Drain-to-Source Voltage (V)
0.4
=150
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
1
C
0.6
3
T
0.8
I
A
D
1
= 25
= 6A
o
T
1
C
j
4
=25
V
2
G
o
1.2
= 2 .0V
C
4.5 V
3.5 V
2.5 V
5.0 V
1.4
2
5
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
1.8
1.4
1.0
0.6
8
4
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
30
I
G
D
=10V
=6A
V
T
v.s. Junction Temperature
Junction Temperature
1
T
DS
j
j
, Junction Temperature (
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
T
-30
50
A
50
=150
3
℃
o
100
100
o
C)
C)
V
4
G
=2.0V
4.5V
3.5V
2.5V
5.0V
5
150
150
4