AP4500GM Advanced Power Electronics Corp., AP4500GM Datasheet - Page 6

• Manufacturer Part Number: AP4500GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4500GM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Rds(on) / Max(m?) Vgs@2.5v: 45
• Qg (nc): 10
• Qgs (nc): 1.1
• Qgd (nc): 4.1
• Id(a): 6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4500GM
20
16
12
60
56
52
48
44
40
8
4
0
8
6
4
2
0
Fig 1. Typical Output Characteristics
1
Fig 3. On-Resistance v.s. Gate Voltage
0
0
Fig 5. Forward Characteristic of
0.2
-V
-V
Reverse Diode
-V
1
GS
DS
SD
2
, Gate-to-Source Voltage (V)
0.4
T
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
j
=150
2
0.6
o
C
3
I
T
T
D
0.8
A
A
= -1.8 A
=25
3
=25
T
o
o
j
C
=25
C
1
V
4
G
o
4
= - 1.5 V
C
- 4.5 V
- 3.5 V
- 2.5 V
- 5.0 V
1.2
1.4
5
5
1.4
1.2
1.0
0.8
0.6
1.2
1.0
0.8
0.6
20
16
12
8
4
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
30
I
V
D
G
= -2.2 A
= - 10V
-V
v.s. Junction Temperature
Junction Temperature
T
DS
T
1
j
0
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
-30
2
50
50
T
A
= 150
o
C
100
100
3
V
o
C)
o
G
C)
= - 1.5 V
- 4.5 V
- 3.5 V
- 2.5 V
-5.0 V
150
4
150
6