AP4501CGM-HF Advanced Power Electronics Corp., AP4501CGM-HF Datasheet - Page 7

• Manufacturer Part Number: AP4501CGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501CGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 45
• Qg (nc): 4.6
• Qgs (nc): 1.2
• Qgd (nc): 3
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
10
10
8
6
4
2
0
1
0.0
0.1
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Operation in this
90%
10%
area limited by
Single Pulse
V
V
R
T
GS
DS(ON)
DS
A
=25
2.0
V
-V
I
Q
o
DS
t
D
C
DS
d(on)
G
= -4A
= -25V
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
1
4.0
t
r
6.0
10
t
d(off)
8.0
t
f
100ms
100us
10ms
1ms
DC
1 s
10.0
100
Fig 10. Effective Transient Thermal Impedance
500
400
300
200
100
0.01
0.1
0
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
30
0.02
V
0.01
0.05
0.1
0.2
Duty factor=0.5
G
Single Pulse
0.001
5
-V
Q
DS
GS
0.01
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
Q
Q
13
0.1
G
AP4501CGM-HF
GD
-30
Charge
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
21
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
+ T
Q
C
C
C
a
oss
iss
rss
1000
29
7