AP4501GM Advanced Power Electronics Corp., AP4501GM Datasheet - Page 6

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness

AP4501GM

Manufacturer Part Number
AP4501GM
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4501GM

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
28
Rds(on) / Max(m?) Vgs@4.5v
42
Qg (nc)
8.4
Qgs (nc)
1.4
Qgd (nc)
4.7
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

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Company
Part Number
Manufacturer
Quantity
Price
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AP4501GM
Manufacturer:
ANPC
Quantity:
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Part Number:
AP4501GM
Manufacturer:
APM
Quantity:
20 000
Company:
Part Number:
AP4501GM
Quantity:
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Part Number:
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Manufacturer:
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Quantity:
20 000
P-Channel
AP4501GM
40
30
20
10
70
60
50
40
30
8
6
4
2
0
0
0
Fig 1. Typical Output Characteristics
2
Fig 3. On-Resistance v.s. Gate Voltage
0
Fig 5. Forward Characteristic of
T
A
=25
0.2
-V
1
-V
-V
Reverse Diode
o
GS
C
DS
SD
4
, Gate-to-Source Voltage (V)
0.4
T
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
j
2
=150
0.6
o
C
3
6
I
T
0.8
D
A
= -4.2 A
=25
4
o
1
T
C
8
j
V
=25
G
= - 3 .0V
5
1.2
o
- 7.0V
- 5.0V
- 4.5V
C
- 10V
1.4
6
10
1.6
1.4
1.2
1.0
0.8
0.6
1.2
1.0
0.8
0.6
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
30
I
V
T
D
G
A
= -5.3 A
= - 10V
= 150
-V
v.s. Junction Temperature
Junction Temperature
T
T
DS
j
o
2
0
j
0
, Junction Temperature (
C
, Junction Temperature (
, Drain-to-Source Voltage (V)
-30
50
50
4
100
100
o
6
V
o
C)
C)
G
= - 3 .0V
- 7.0V
- 5.0V
- 4.5V
- 10V
150
150
8
6

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