AP4502AGM-HF Advanced Power Electronics Corp., AP4502AGM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost- effectiveness

AP4502AGM-HF

Manufacturer Part Number
AP4502AGM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost- effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4502AGM-HF

Vds
20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
18
Rds(on) / Max(m?) Vgs@2.5v
30
Qg (nc)
8
Qgs (nc)
1
Qgd (nc)
4
Id(a)
8.5
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
D1
3
3
D1
SO-8
D2
D2
S1
G1
S2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
G2
N-channel
3
+12
N-CH BV
P-CH BV
8.5
6.8
20
30
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
2.0
R
I
R
I
D
D
P-channel
AP4502AGM-HF
D1
DS(ON)
DS(ON)
DSS
DSS
Value
S1
62.5
+12
-4.5
-3.6
-20
-20
G2
18mΩ
200906171
60mΩ
-4.5A
-20V
8.5A
Units
℃/W
20V
Unit
W
V
V
A
A
A
D2
S2
1

Related parts for AP4502AGM-HF

AP4502AGM-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 N-channel Parameter 3 AP4502AGM-HF Halogen-Free Product N-CH BV 20V DSS R 18mΩ DS(ON) I 8.5A D P-CH BV -20V DSS R 60mΩ DS(ON) I -4. ...

Page 2

... AP4502AGM-HF N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... DS V =+12V =- =-10V DS V =-4. =-10V =3.3Ω, =10Ω = =-20V DS f=1.0MHz Test Conditions 2 I =-1.7A =-4A dI/dt=-100A/µs AP4502AGM-HF Min. Typ. - =-250uA -0 1 780 - ...

Page 4

... AP4502AGM-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 0.05 0.02 10ms 0.01 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V 4. d(off) f Fig 12. Gate Charge Waveform AP4502AGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 Single Pulse t T Duty factor = t/T ...

Page 6

... AP4502AGM-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 Duty factor=0.5 100us 1ms 10ms 0.1 100ms 1s 0.02 0.01 DC 0.01 10 100 0.001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4502AGM-HF f=1.0MHz Drain-to-Source Voltage (V) DS 0.2 0.1 0. Single Pulse Duty factor = t/T Peak ...

Related keywords