AP4502AGM-HF Advanced Power Electronics Corp., AP4502AGM-HF Datasheet - Page 5

• Manufacturer Part Number: AP4502AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4502AGM-HF

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Rds(on) / Max(m?) Vgs@2.5v: 30
• Qg (nc): 8
• Qgs (nc): 1
• Qgd (nc): 4
• Id(a): 8.5
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Single Pulse
V
90%
10%
V
T
DS
GS
A
=25
V
DS
Q
0.1
4
o
t
C
I
V
, Drain-to-Source Voltage (V)
G
d(on)
D
DS
, Total Gate Charge (nC)
=8A
=10V
t
r
8
1
t
d(off)
12
10
t
f
100us
1ms
10ms
100ms
1s
DC
100
16
Fig 10. Effective Transient Thermal Impedance
0.001
0.01
800
600
400
200
0.1
0.0001
1
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
0.05
0.01
0.1
Single Pulse
0.2
0.001
G
Duty factor=0.5
5
V
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
Q
Q
0.1
G
GD
AP4502AGM-HF
Charge
13
1
17
P
DM
Duty factor = t/T
Peak T
R
thja
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
C
C
C
21
x R
100
oss
rss
iss
thja
+ T
Q
a
1000
25
5