AP4502AGM-HF Advanced Power Electronics Corp., AP4502AGM-HF Datasheet - Page 6

• Manufacturer Part Number: AP4502AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4502AGM-HF

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Rds(on) / Max(m?) Vgs@2.5v: 30
• Qg (nc): 8
• Qgs (nc): 1
• Qgd (nc): 4
• Id(a): 8.5
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4502AGM-HF
30
20
10
80
70
60
50
40
0
4
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
0
0
Fig 5. Forward Characteristic of
0.2
-V
Reverse Diode
-V
1
1
-V
DS
SD
T
GS
, Drain-to-Source Voltage (V)
j
, Source-to-Drain Voltage (V)
=150
0.4
,Gate-to-Source Voltage (V)
2
2
o
T
C
A
0.6
= 25
I
T
D
A
= -3 A
=25
o
3
3
C
0.8
o
C
T
j
V
=25
4
4
G
1
= - 2.0V
o
-2.5V
C
-5.0V
-4.5V
-3.5V
1.2
5
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
D
A
G
= -4A
= 150
= -4.5V
1
v.s. Junction Temperature
Junction Temperature
-V
o
T
T
C
DS
0
0
j
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
3
50
50
4
100
100
o
o
V
C)
C)
G
5
= - 2.0V
-5.0V
-4.5V
-3.5V
-2.5V
6
150
150
6