AP4502AGM-HF Advanced Power Electronics Corp., AP4502AGM-HF Datasheet - Page 7

• Manufacturer Part Number: AP4502AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4502AGM-HF

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Rds(on) / Max(m?) Vgs@2.5v: 30
• Qg (nc): 8
• Qgs (nc): 1
• Qgd (nc): 4
• Id(a): 8.5
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
10
8
6
4
2
0
1
0
0.1
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
90%
10%
Single Pulse
V
V
T
GS
DS
c
=25
4
-V
Q
I
V
o
C
D
t
DS
DS
G
d(on)
= -4 A
, Total Gate Charge (nC)
= -10 V
, Drain-to-Source Voltage (V)
1
t
8
r
12
10
t
d(off)
16
t
100us
1ms
10ms
100ms
1s
DC
f
100
20
Fig 10. Effective Transient Thermal Impedance
1200
1000
0.01
800
600
400
200
0.1
0
1
0.001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
Duty factor=0.5
0.02
0.01
0.2
0.1
0.05
V
Single Pulse
G
0.01
5
-V
Q
DS
GS
, Drain-to-Source Voltage (V)
0.1
t , Pulse Width (s)
9
Q
Q
G
AP4502AGM-HF
GD
Charge
13
1
17
10
P
DM
Duty factor = t/T
Peak T
R
thja
=135
j
= P
t
o
C/W
f=1.0MHz
DM
T
21
100
x R
thja
+ T
C
C
C
Q
a
oss
iss
rss
1000
25
7