AP4509GM Advanced Power Electronics Corp., AP4509GM Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness

AP4509GM

Manufacturer Part Number
AP4509GM
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4509GM

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
±20V
Rds(on) / Max(m?) Vgs@4.5v
14
Rds(on) / Max(m?) Vgs@2.5v
20
Qg (nc)
23
Qgs (nc)
6
Qgd (nc)
14
Id(a)
10
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4509GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance Junction-ambient
Parameter
Parameter
1
D1
D1
D1
D1
SO-8
SO-8
3
3
D2
D2
D2
D2
S1
S1
G1
G1
S2
S2
G2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
RoHS-compliant Product
+20
30
10
7.9
30
G1
-55 to 150
-55 to 150
Rating
2.0
0.016
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
62.5
D1
S1
-8.4
-6.7
-30
+20
-30
AP4509GM
G2
200812042
14mΩ
20mΩ
-8.4A
-30V
Units
W/℃
℃/W
10A
30V
Unit
W
V
V
A
A
A
D2
S2
1

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AP4509GM Summary of contents

Page 1

... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO SO-8 S1 N-channel Parameter 3 AP4509GM RoHS-compliant Product N-CH BV 30V DSS R 14mΩ DS(ON) I 10A D P-CH BV -30V DSS R 20mΩ DS(ON) I -8. Rating Units P-channel ...

Page 2

... AP4509GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =- =-24V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.7A =-8A dI/dt=-100A/µs AP4509GM Min. Typ. Max. Units -30 - =-1mA - -0. =-250uA - ...

Page 4

... AP4509GM N-Channel 160 140 120 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f AP4509GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty factor = t/T Peak ...

Page 6

... AP4509GM P-Channel 160 140 120 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4509GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

Page 8

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4509GM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code ...

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