AP4509GM Advanced Power Electronics Corp., AP4509GM Datasheet - Page 5

• Manufacturer Part Number: AP4509GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: ±20V
• Rds(on) / Max(m?) Vgs@4.5v: 14
• Rds(on) / Max(m?) Vgs@2.5v: 20
• Qg (nc): 23
• Qgs (nc): 6
• Qgd (nc): 14
• Id(a): 10
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
14
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
V
Single Pulse
T
DS
GS
V
A
I
DS
=25
D
=9A
=24V
10
V
Q
o
DS
C
t
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
1
t
20
r
30
10
t
d(off)
40
t
f
100us
1ms
10ms
100ms
1s
DC
100
50
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
0.1
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
Fig 12. Gate Charge Waveform
4.5V
V
0.001
G
5
0.01
Duty factor=0.5
0.02
0.1
0.05
0.2
V
Q
Single Pulse
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
G
GD
Charge
17
1
AP4509GM
P
DM
Duty factor = t/T
Peak T
R
21
10
thja
=135
j
f=1.0MHz
t
= P
o
C/W
DM
T
x R
100
25
thja
C
C
Q
C
+ T
rss
oss
a
iss
1000
29
5