AP4509GM Advanced Power Electronics Corp., AP4509GM Datasheet - Page 6

• Manufacturer Part Number: AP4509GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: ±20V
• Rds(on) / Max(m?) Vgs@4.5v: 14
• Rds(on) / Max(m?) Vgs@2.5v: 20
• Qg (nc): 23
• Qgs (nc): 6
• Qgd (nc): 14
• Id(a): 10
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4509GM
160
140
120
100
80
60
40
20
0
33
30
27
24
21
18
15
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
0
3
Fig 5. Forward Characteristic of
T
A
1
= 25
0.2
T
-V
Reverse Diode
-V
-V
j
=150
SD
o
GS
DS
5
C
, Source-to-Drain Voltage (V)
2
,Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
o
0.4
C
3
0.6
7
4
0.8
5
T
T
I
j
9
A
D
=25
V
=25
= - 4 A
G
1
=-3.0V
o
6
-10V
-7.0V
-5.0V
-4.5V
C
o
C
1.2
7
11
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
2.5
1.5
0
2
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
A
D
G
= 150
1
=- 8 A
=-10V
v.s. Junction Temperature
Junction Temperature
-V
T
T
o
0
0
j
DS
C
j
, Junction Temperature (
, Junction Temperature (
2
, Drain-to-Source Voltage (V)
50
50
3
4
100
100
V
o
o
C)
G
C)
=-3.0V
5
-10V
-7.0V
-5.0V
-4.5V
150
150
6
6