AP92T03GJ-HF Advanced Power Electronics Corp., AP92T03GJ-HF Datasheet - Page 3

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP92T03GJ-HF

Manufacturer Part Number
AP92T03GJ-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP92T03GJ-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4
Rds(on) / Max(m?) Vgs@4.5v
5.2
Qg (nc)
45
Qgs (nc)
6
Qgd (nc)
26
Id(a)
75
Pd(w)
89
Configuration
Single N
Package
TO-251
280
240
200
160
120
40
30
20
10
80
40
10
0
0
8
6
4
2
0
0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
V
V
V
Reverse Diode
2
j
=150
SD
DS
GS
2
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.5
o
C
4
T
4
C
T
=25
j
=25
6
T
o
I
C
D
C
1
o
=25
C
=30A
6
V
8
G
5.0V
4.5V
7.0V
=3.0V
10V
1.5
10
8
240
200
160
120
1.6
1.2
0.8
0.4
80
40
6
5
4
3
2
0
2
0
0
25
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. On-Resistance vs.
V
I
D
G
=40A
=10V
v.s. Junction Temperature
Drain Current
20
50
2
V
T
j
DS
I
, Junction Temperature (
D
, Drain-to-Source Voltage (V)
, Drain Current (A)
V
40
75
4
V
AP92T03GH/J-HF
GS
GS
=4.5V
T
=10V
C
=150
100
60
6
o
C
o
125
80
V
8
C)
G
=3.0V
7.0V
5.0V
4.5V
10V
150
100
10
3

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