AP92T03GS Advanced Power Electronics Corp., AP92T03GS Datasheet - Page 3

• Manufacturer Part Number: AP92T03GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP92T03GS

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 4
• Rds(on) / Max(m?) Vgs@4.5v: 5.2
• Qg (nc): 45
• Qgs (nc): 6
• Qgd (nc): 26
• Id(a): 80
• Pd(w): 89
• Configuration: Single N
• Package: TO-263

280
240
200
160
120
80
40
10
40
30
20
10
0
8
6
4
2
0
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
0.2
V
V
DS
V
T
SD
2
4
GS
, Drain-to-Source Voltage (V)
j
Reverse Diode
=150
0.4
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
o
C
0.6
4
6
T
T
I
0.8
C
C
D
= 25
=25
=30A
T
o
o
j
C
C
=25
1
6
8
o
V
C
G
1.2
= 3.0 V
7.0 V
5.0 V
4.5 V
10 V
8
10
1.4
240
200
160
120
2.4
2.0
1.6
1.2
0.8
0.4
80
40
Fig 2. Typical Output Characteristics
6.0
5.0
4.0
3.0
2.0
0
Fig 4. Normalized On-Resistance
0
25
Fig 6. On-Resistance vs.
0
V
I
D
G
=40A
=10V
v.s. Junction Temperature
Drain Current
V
2
50
20
DS
T
, Drain-to-Source Voltage (V)
j
V
V
, Junction Temperature (
GS
GS
I
T
=4.5V
D
=10V
4
C
75
40
, Drain Current (A)
= 150
o
AP92T03GS/P
C
6
100
60
V
o
8
125
80
C)
G
= 3 .0V
5.0V
4.5V
7.0V
10V
10
100
150
3