AP4511GD Advanced Power Electronics Corp., AP4511GD Datasheet
AP4511GD
Specifications of AP4511GD
Related parts for AP4511GD
AP4511GD Summary of contents
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... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP Parameter AP4511GD RoHS-compliant Product N-CH BV DSS R DS(ON P-CH BV DSS R DS(ON Rating N-channel P-channel ...
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... AP4511GD N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... D V =-28V DS V =-4. =-18V =3.3Ω, =18Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-6A dI/dt=-100A/µs AP4511GD Min. Typ. -35 - =-1mA - -0. =-10V ...
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... AP4511GD N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...
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... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. =150 Fig 12. Gate Charge Waveform AP4511GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...
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... AP4511GD P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 110 ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...
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... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 C j -4. Fig 12. Gate Charge Waveform AP4511GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse t T Duty factor = t/T Peak T ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : DIP Part Marking Information & Packing : DIP-8 4511GD YWWSSS 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y： ...