AP4511GD Advanced Power Electronics Corp., AP4511GD Datasheet - Page 4

• Manufacturer Part Number: AP4511GD
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GD

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 37
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
AP4511GD
50
40
30
20
10
80
60
40
20
0
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
T
Reverse Diode
V
1
DS
j
V
=150
SD
GS
4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
0.4
o
T
C
A
2
= 25
o
0.6
6
C
3
T
I
0.8
A
D
=25
= 5 A
T
8
j
o
=25
V
4
C
G
1
=3.0V
o
C
7.0V
5.0V
4.5V
10V
1.2
5
10
1.8
1.4
1.0
0.6
50
40
30
20
10
1.6
1.2
0.8
0.4
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
A
D
G
= 150
= 7 A
=10V
V
v.s. Junction Temperature
Junction Temperature
1
T
DS
T
j
o
0
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
C
, Junction Temperature (
2
50
50
3
100
100
o
C)
o
4
C)
V
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
5
4