AP4511GD Advanced Power Electronics Corp., AP4511GD Datasheet - Page 5

• Manufacturer Part Number: AP4511GD
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GD

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 37
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
0.01
100
0.1
16
12
10
30
20
10
8
4
0
1
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
Single Pulse
DS
V
T
I
=5V
DS
A
D
=25
=7A
=28V
5
V
V
Q
DS
o
GS
C
G
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
1
2
10
T
j
=25
o
C
15
10
4
T
j
20
=150
100ms
100us
10ms
o
1ms
DC
1s
C
25
100
6
Fig 10. Effective Transient Thermal Impedance
1000
0.001
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.01
0.1
Duty factor=0.5
0.05
0.02
G
0.2
5
0.001
Single Pulse
V
Q
DS
GS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.01
Q
Q
13
G
GD
Charge
0.1
17
P
1
AP4511GD
DM
Duty factor = t/T
Peak T
R
21
thja
=90
j
= P
t
o
C/W
DM
f=1.0MHz
T
10
x R
25
thja
C
C
+ T
Q
C
oss
rss
a
iss
100
29
5