AP4511GD Advanced Power Electronics Corp., AP4511GD Datasheet - Page 6

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4511GD

Manufacturer Part Number
AP4511GD
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4511GD

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
37
Qg (nc)
11
Qgs (nc)
3
Qgd (nc)
6
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4511GD
Manufacturer:
APEC
Quantity:
15 723
P-Channel
AP4511GD
110
50
40
30
20
10
90
70
50
30
0
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
2
0
0
Fig 5. Forward Characteristic of
T
A
= 25
0.2
T
-V
Reverse Diode
-V
1
o
j
-V
C
=150
SD
4
GS
DS
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
0.4
o
, Drain-to-Source Voltage (V)
C
2
0.6
6
3
0.8
T
I
T
A
D
8
=25
j
= -4 A
V
=25
4
G
1
= - 3.0V
o
o
-7.0V
-5.0V
-4.5V
C
-10V
C
10
1.2
5
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
50
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
T
I
G
A
D
=-10V
= 150
=-6A
T
v.s. Junction Temperature
Junction Temperature
-V
1
j
T
, Junction Temperature (
DS
o
0
j
0
C
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
50
50
3
o
100
C)
100
o
V
C)
4
G
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
150
5
150
6

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