AP4511GED Advanced Power Electronics Corp., AP4511GED Datasheet - Page 4

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GED

Manufacturer Part Number
AP4511GED
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4511GED

Vds
40V
Vgs
±16V
Rds(on) / Max(m?) Vgs@10v
28
Rds(on) / Max(m?) Vgs@4.5v
36
Qg (nc)
8.2
Qgs (nc)
1.5
Qgd (nc)
3.6
Id(a)
6
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
N-Channel
AP4511GED
105
30
20
10
75
45
15
0
8
6
4
2
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
= 25
0.2
V
o
Reverse Diode
V
C
DS
V
SD
GS
4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T
, Gate-to-Source Voltage (V)
0.4
j
1
=150
o
C
0.6
6
T
I
A
D
=25
= 4 A
0.8
2
T
o
j
C
=25
8
V
o
1
C
G
=3.0V
7.0V
5.0V
4.5V
10V
1.2
3
10
1.6
1.2
0.8
1.6
1.2
0.8
0.4
30
20
10
0
25
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
T
D
G
A
= 6 A
=10V
= 150
V
v.s. Junction Temperature
Junction Temperature
50
o
DS
T
C
T
1
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
75
50
2
100
100
3
o
o
125
C)
C)
V
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
4
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