AP4511GH Advanced Power Electronics Corp., AP4511GH Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GH

Manufacturer Part Number
AP4511GH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4511GH

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
30
Rds(on) / Max(m?) Vgs@4.5v
40
Qg (nc)
11
Qgs (nc)
3
Qgd (nc)
6
Id(a)
15
Pd(w)
10.4
Configuration
Complementary N-P
Package
TO-252-4L
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
S1
1
G1
3
3
S2
G2
TO-252-4L
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
N-channel
3
N-CH BV
P-CH BV
RoHS-compliant Product
+20
35
15
50
G1
9
-55 to 150
-55 to 150
Rating
0.083
10.4
R
I
R
I
D
D
D1
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
S1
+20
110
-35
-12
-50
12
-7
G2
AP4511GH
30mΩ
48mΩ
200809174
-35V
-12A
Units
Units
W/℃
℃/W
℃/W
15A
35V
W
D2
V
V
A
A
A
S2
1

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AP4511GH Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter 3 3 AP4511GH RoHS-compliant Product N-CH BV 35V DSS R 30mΩ DS(ON) I 15A D P-CH BV -35V DSS R 48mΩ DS(ON) I -12A ...

Page 2

... AP4511GH N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... D V =-28V DS V =-4. =-18V =3.3Ω, =18Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-6A =-6A dI/dt=-100A/µs AP4511GH Min. Typ. -35 - =-1mA - -0. =-10V ...

Page 4

... AP4511GH N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms DC 0.01 10 100 0.00001 Fig 10. Effective Transient Thermal Impedance V o =150 Fig 12. Gate Charge Waveform AP4511GH f=1.0MHz C iss C oss C rss Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 ...

Page 6

... AP4511GH P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms DC 0.01 10 100 0.00001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4511GH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 t 0.01 Duty factor = t/T Single Pulse Peak ...

Page 8

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L Part Marking Information & Packing : TO-252(4L) 4511GH YWWSSS Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 6.40 6.6 B 5.2 5.35 C 9.40 9.80 D 2.40 2.70 1.27 REF 0.50 0.65 E3 3.50 4.00 R 0.80 1.00 G 0.40 0.50 H 2.20 2.30 J 0.45 0.50 K 0.00 0.075 L 0.90 1.20 M 5.40 5.60 1.All Dimensions Are in Millimeters. ...

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