AP4511GH-A Advanced Power Electronics Corp., AP4511GH-A Datasheet - Page 3

• Manufacturer Part Number: AP4511GH-A
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GH-A

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 27
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 8.6
• Pd(w): 3.125
• Configuration: Complementary N-P
• Package: TO-252-4L

ΔBV
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
P-CH Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
j
=25
=150
o
C)
o
C)
j
2
=25
V
Reference to 25℃,I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=-100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=-6A, V
=-6A, V
=-6A
=-1A
o
=3.3Ω,V
=18Ω
C(unless otherwise specified)
=V
=-10V, I
=-35V, V
=-28V, V
=-28V
=-18V
=-25V
=0V, I
=-10V, I
=-4.5V, I
=±20V
=-4.5V
=0V
GS
Test Conditions
Test Conditions
, I
GS
GS
D
D
=-250uA
=0V
=0V
D
D
=-250uA
GS
D
GS
GS
=-6A
=-6A
=-4A
=-10V
=0V
=0V
D
=-1mA
Min.
Min.
-0.8
-35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AP4511GH-A
-0.02
Typ.
Typ.
690
165
130
10
10
10
26
20
12
2
6
6
7
5
-
-
-
-
-
-
-
-
1100
Max. Units
±100
Max. Units
-2.5
-1.2
-25
7.5
45
70
19
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
uA
uA
nA
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
Ω
ns
V
V
S
V
3/7