AP4511GH-A Advanced Power Electronics Corp., AP4511GH-A Datasheet - Page 6

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GH-A

Manufacturer Part Number
AP4511GH-A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4511GH-A

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
27
Rds(on) / Max(m?) Vgs@4.5v
36
Qg (nc)
11
Qgs (nc)
3
Qgd (nc)
6
Id(a)
8.6
Pd(w)
3.125
Configuration
Complementary N-P
Package
TO-252-4L
P-Channel
AP4511GH-A
50
40
30
20
10
0
70
60
50
40
30
6
5
4
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
T
C
= 25
-V
0.2
-V
Reverse Diode
-V
SD
1
o
C
DS
T
GS
4
, Source-to-Drain Voltage (V)
j
, Drain-to-Source Voltage (V)
=150
,Gate-to-Source Voltage (V)
0.4
o
2
C
0.6
6
T
I
D
C
3
=25
= - 4 A
0.8
o
C
T
8
V
j
=25
G
4
1
= - 3.0V
-7.0V
-5.0V
-4.5V
o
-10V
C
1.2
10
5
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
50
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
T
G
D
= - 10V
C
= -6 A
= 150
v.s. Junction Temperature
Junction Temperature
-V
T
1
T
j
j
DS
0
0
o
, Junction Temperature (
, Junction Temperature (
C
, Drain-to-Source Voltage (V)
2
50
50
3
100
o
o
100
V
C)
C)
G
4
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
150
150
5
6/7

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