AP4511GM Advanced Power Electronics Corp., AP4511GM Datasheet - Page 3

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GM

Manufacturer Part Number
AP4511GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4511GM

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
37
Qg (nc)
11
Qgs (nc)
3
Qgd (nc)
6
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4511GM
Manufacturer:
N/A
Quantity:
20 000
Part Number:
AP4511GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
P-CH Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
2
j
j
=25
=70
o
o
C)
C)
j
2
=25
V
Reference to 25℃,I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=-100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=-1.7A, V
=-6A, V
=-6A
=-1A
=18Ω
=3.3Ω,V
o
=V
=-10V, I
=-35V, V
=-28V, V
=-28V
=-18V
=-25V
=0V, I
=-10V, I
=-4.5V, I
=±20V
=-4.5V
=0V
C(unless otherwise specified)
GS
Test Conditions
Test Conditions
, I
GS
D
D
=-250uA
GS
=0V
=-250uA
D
GS
D
D
GS
GS
=-6A
=-6A
=-4A
=0V
=-10V
=0V
=0V
D
=-1mA
Min.
Min.
-35
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.02
Typ. Max. Units
Typ. Max. Units
AP4511GM
690
165
130
5.2
32
50
10
10
26
20
12
9
2
6
6
7
-
-
-
-
-
-
±100
1100
-1.2
-25
7.8
40
60
16
-3
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
Ω
ns
V
V
S
V

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