AP4511GM Advanced Power Electronics Corp., AP4511GM Datasheet - Page 5

• Manufacturer Part Number: AP4511GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GM

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 37
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
14
12
10
30
20
10
10
0
8
6
4
2
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
V
Single Pulse
DS
I
T
DS
D
=5V
A
=7A
=28V
=25
5
V
Q
V
2
GS
T
G
o
DS
C
j
=25
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
o
10
C
4
15
T
10
j
=150
6
20
o
C
100ms
10ms
10us
1ms
DC
1s
25
100
8
Fig 10. Effective Transient Thermal Impedance
1000
100
0.001
0.01
10
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.001
0.02
0.01
G
5
0.05
Duty factor=0.5
0.1
0.2
Single Pulse
V
Q
DS
GS
9
0.01
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
Q
13
Q
0.1
G
GD
Charge
17
1
AP4511GM
P
DM
Duty factor = t/T
Peak T
R
21
thja
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
C
C
+ T
Q
C
rss
oss
a
iss
1000
29