AP4511GM Advanced Power Electronics Corp., AP4511GM Datasheet - Page 7

• Manufacturer Part Number: AP4511GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GM

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 37
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
14
12
10
10
30
20
10
8
6
4
2
0
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
V
Single Pulse
I
DS
T
DS
D
-V
c
=-5V
= -6 A
= - 28V
=25
-V
5
DS
GS
T
2
Q
, Drain-to-Source Voltage (V)
o
j
G
C
=25
, Gate-to-Source Voltage (V)
1
, Total Gate Charge (nC)
o
10
C
4
15
T
j
=150
10
6
o
C
20
100ms
100us
10ms
1ms
DC
1s
25
100
8
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
0.01
100
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
Duty factor=0.5
G
0.001
0.05
0.02
5
0.2
0.1
0.01
Single Pulse
-V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
G
GD
Charge
17
1
P
AP4511GM
DM
Duty factor = t/T
Peak T
R
21
thja
10
=135
j
= P
t
o
f=1.0MHz
C/W
DM
T
x R
100
25
thja
+ T
Q
C
C
C
a
iss
oss
rss
1000
29