AP4513GD Advanced Power Electronics Corp., AP4513GD Datasheet - Page 5

• Manufacturer Part Number: AP4513GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4513GD

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
0.01
100
0.1
10
12
9
6
3
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
V
DS
GS
Single Pulse
V
T
V
I
DS
D
A
DS
= 5 A
=25
=2 8 V
, Drain-to-Source Voltage (V)
Q
4
t
d(on)
G
o
C
, Total Gate Charge (nC)
1
t
r
8
10
t
d(off)
12
t
f
100ms
100us
10ms
1ms
DC
1s
100
16
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.2
Duty factor=0.5
0.05
0.1
V
0.02
0.01
Single Pulse
0.001
G
5
Q
V
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
G
GD
Charge
17
1
AP4513GD
P
DM
Duty factor = t/T
Peak T
R
21
10
thja
=90
j
t
= P
o
C/W
f=1.0MHz
DM
T
100
x R
25
thja
C
C
C
Q
+ T
iss
oss
rss
a
1000
29
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