AP4513GD Advanced Power Electronics Corp., AP4513GD Datasheet - Page 6

• Manufacturer Part Number: AP4513GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4513GD

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

P-Channel
AP4513GD
135
115
30
20
10
95
75
55
0
4
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
T
A
=25
0.2
T
-V
1
j
Reverse Diode
-V
-V
o
=150
GS
C
DS
SD
4
, Gate-to-Source Voltage (V)
0.4
o
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
C
2
0.6
3
6
0.8
T
4
I
T
A
D
1
j
=25
= -2 A
=25
8
V
o
o
G
C
5
C
1.2
= - 3.0V
- 7.0V
- 5.0V
- 4.5V
- 10V
1.4
6
10
1.8
1.4
1.0
0.6
30
20
10
1.5
1.1
0.7
0.3
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
A
D
G
= 150
= -4 A
1
= - 10V
-V
v.s. Junction Temperature
Junction Temperature
T
DS
T
j
o
0
0
C
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
50
3
50
4
100
100
o
V
C)
o
G
C)
= - 3.0V
5
- 7.0V
- 5.0V
- 4.5V
- 10V
150
6
150
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