AP4513GD Advanced Power Electronics Corp., AP4513GD Datasheet - Page 7

• Manufacturer Part Number: AP4513GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4513GD

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

P-Channel
0.01
100
0.1
10
1
12
10
0.1
8
6
4
2
0
0.0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
V
V
Single Pulse
GS
DS
T
V
-V
A
I
DS
=25
D
DS
=-4A
=-28V
Q
3.0
, Drain-to-Source Voltage (V)
t
o
G
d(on)
C
1
, Total Gate Charge (nC)
t
r
6.0
10
t
d(off)
9.0
t
f
100ms
100us
10ms
1ms
DC
1s
12.0
100
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
0.02
0.01
0.2
0.1
0.05
Duty factor=0.5
G
5
0.001
Single Pulse
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.01
t , Pulse Width (s)
Q
Q
13
G
GD
Charge
0.1
17
P
1
AP4513GD
DM
Duty factor = t/T
Peak T
R
thja
21
=90
j
= P
o
t
C/W
DM
f=1.0MHz
T
x R
10
25
thja
+ T
C
C
C
Q
a
iss
rss
oss
100
29
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