AP4513GM-HF Advanced Power Electronics Corp., AP4513GM-HF Datasheet - Page 4

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4513GM-HF

Manufacturer Part Number
AP4513GM-HF
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4513GM-HF

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
36
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
6
Qgs (nc)
2
Qgd (nc)
3
Id(a)
5.8
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4513GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
N-Channel
AP4513GM
30
20
10
0
65
55
45
35
25
5
4
3
2
1
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
T
Reverse Diode
SD
1
V
DS
j
=150
GS
4
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
0.4
A
o
=25
C
2
o
C
0.6
6
3
0.8
T
I
A
D
T
=25
8
=3A
j
=25
V
4
1
o
G
C
=3.0V
o
7.0V
5.0V
4.5V
C
10V
1.2
10
5
1.5
1.1
0.7
0.3
30
20
10
1.8
1.4
1.0
0.6
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
= 150
I
V
D
G
=5A
v.s. Junction Temperature
Junction Temperature
V
=10V
1
o
T
C
DS
j
0
0
,Junction Temperature (
T
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
2
50
50
3
100
100
o
C)
4
V
o
G
C)
=3.0V
7.0V
5.0V
4.5V
10V
150
150
5
4

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