AP4515GM Advanced Power Electronics Corp., AP4515GM Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4515GM

Manufacturer Part Number
AP4515GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4515GM

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
22
Rds(on) / Max(m?) Vgs@4.5v
36
Qg (nc)
11
Qgs (nc)
3.5
Qgd (nc)
6
Id(a)
7.7
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1
D1
D1
D1
D1
SO-8
SO-8
3
3
D2
D2
D2
D2
S1
S1
3
G1
G1
S2
S2
G2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
±20
Pb Free Plating Product
35
7.7
6.2
30
G1
-55 to 150
-55 to 150
Rating
2.0
0.016
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
62.5
-5.7
-4.6
S1
±12
D1
-35
-30
AP4515GM
G2
200408051-1/7
22mΩ
40mΩ
-5.7A
-35V
7.7A
Units
W/℃
℃/W
35V
Unit
W
V
V
A
A
A
D2
S2

Related parts for AP4515GM

AP4515GM Summary of contents

Page 1

... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO SO-8 S1 N-channel Parameter 3 AP4515GM Pb Free Plating Product N-CH BV 35V DSS R 22mΩ DS(ON) I 7.7A D P-CH BV -35V DSS R 40mΩ DS(ON) I -5. Rating Units P-channel ...

Page 2

... AP4515GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I =- =-25V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-5A dI/dt=-100A/µs AP4515GM Min. Typ. Max. Units -35 - =-1mA - -0. =-250uA - ...

Page 4

... AP4515GM N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of Reverse Diode ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4515GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 0.01 Duty factor = t/T Peak ...

Page 6

... AP4515GM P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 110 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 C j -4. Fig 12. Gate Charge Waveform AP4515GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

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